2SD965 npn silicon epitaxial planar transistor for low-frequency power and stroboscope applications. the transistor is subdivided into three groups p, q and r, according to its dc current gain. on special request, thes e transistors can be manufactured in different pin configurations. features ? low collector-emitter saturation voltage ? satisfactory operation performances at high to-92 plastic package efficiency with the low voltage power supply weight approx. 0.19g absolute maximum ratings (ta=25 o c) symbol value unit collector base voltage v cbo 40 v collector emitter voltage v ceo 20 v emitter base voltage v ebo 7 v peak collector current i cp 8 a collector current i c 5 a power dissipation p tot 750 mw junction temperature t j 150 o c storage temperature range t s -55 to +150 o c
2SD965 characteristics at t amb =25 o c symbol min. typ. max. unit dc current gain at v ce =2v, i c =0.5a at v ce =2v, i c =1a p q r h fe h fe h fe h fe 120 230 340 150 - - - - 250 380 600 - - - - - collector cutoff current at v cb =10v i cbo - - 0.1 a collector cutoff current at v ce =10v i ceo - - 1.0 a emitter cutoff current at v eb =7v i ebo - - 0.1 a collector output capacitance at v cb =20v, f=1mhz (common base, input open circuited) cob - 26 50 pf collector to emitter voltage at i c =1ma v ceo 20 - - v emitter to base voltage at i e =10 a v ebo 7 - - v collector to emitter saturation voltage at i c =3a, i b =0.1a v ce(sat) - 0.28 1 v current gain bandwidth product at v cb =6v, i e = -50ma, f=200mhz f t - 150 - mhz
2SD965 2.4 2.0 1.6 1.2 0.8 0 0.4 10 100 0.1 0.01 10 1 0.01 0.1 f t , m h z c o l l e c t o r o u t p u t c a p a c i t a n c e , p f ( c o m m o n b a s e , i n p u t o p e n c i r c u i t e d ) 100 i e, a 0 -0.01 -0.1 -1 -10 f t - i e collector current, a 300 200 400 v cb =6v ta=25 c v c e ( s a t ) , v p c , m w v ce(sat) - i c ta= 75 c 0.1 25 c 0.001 0.01 ic/ib=30 10 1 v b e ( s a t ) , v -25 c ta ( c) 200 0 0 80 40 600 400 120 160 i c , a p c - ta 800 1000 25 c 10 1 0.01 0.110 1 0.1 0.01 0.1 0.1 vcb, v 0 1 20 10 100 0.01 cob - v cb collector current, a 60 40 80 100 1 i c , a 10 i e =0 f=1mhz ta=25 c 100 1 10 vce, v 100 t=10ms single pulse ta=25 c s afe operation area collector current, a i cp i c t=1s 0 v be(sat) - i c ta= -25 c 1 75 c 25 c ic/ib=30 300 200 h f e 100 0 500 600 400 1.6 0.8 0.4 0 1.2 v ce , v 1ma 2.4 2.0 0 1 2ma 3ma 4ma 5ma 6ma 4 2 i c , a 3 h fe - i c ta= 75 c 25 c -25 c v ce =2v ta=25 c 1.6 0.8 0.4 v be , v 1.2 -25 c 2.0 i b =7ma ta=25 c i c - v ce 5 6 ta= 75 c i c - v be v ce =2v
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